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參數(shù)資料
| 型號： | MJE13002B-AP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 62K |
| 代理商： | MJE13002B-AP |
MJE13002B
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 900mWatts of Power Dissipation.
Collector-current 0.8A
Collector-base Voltage 600V
Operating and storage junction temperature range: -55
OC to +150OC
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
400
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
600
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
6.0
Vdc
ICBO
Collector Cutoff Current
(VCB=600Vdc, IE=0)
100
uAdc
IEBO
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
100
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=10mAdc, VCE=10Vdc)
6
hFE(2)
DC Current Gain
(IC=200mAdc, VCE=10Vdc)
9.0
40
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc)
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc)
1.1
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=100mAdc, VCE=10Vdc, f=1.0MHz)
5.0
MHz
tF
Fall Time
0.5
uS
tS
Storage Time
VCC=100V,IC=1.0A,
IB1=IB2=0.2A
2.5
uS
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 3
2008/02/01
TM
Micro Commercial Components
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
AE
B
C
D
G
1
2
3
1.BASE
3.EMITTER
2.COLLECTOR
TO-92
www.mccsemi.com
1 of 2
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE13002B-BP | 800 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13002B | 800 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13003A | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13003B | 1 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13003Y | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13003 | 功能描述:兩極晶體管 - BJT BIP NPN 2A 400V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE13003_06 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-126 PACKAGE |
| MJE13003_09 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13003_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13003A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MJE SERIES TRANSISTORS |
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