參數(shù)資料
型號: MJD44H11
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary Power Transistors(互補型功率晶體管)
中文描述: 8 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù): 2/7頁
文件大?。?/td> 76K
代理商: MJD44H11
MJD44H11 (NPN) MJD45H11 (PNP)
http://onsemi.com
2
C
MJD44H11
140
100
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
V
CEO(sus)
80
Vdc
(V
CE
= Rated V
CEO
, V
BE
= 0)
Emitter Cutoff Current
EB
ON CHARACTERISTICS
CollectorEmitter Saturation Voltage
(I
= 8 Adc, I
= 0.8 Adc)
BE(sat)
(V
CE
= 1 Vdc, I
C
= 2 Adc)
40
DC Current Gain
MJD45H11
cb
230
Gain Bandwidth Product
C
CE
MJD45H11
MHz
SWITCHING TIMES
(I
C
= 5 Adc, I
B1
= 0.5 Adc)
Storage Time
MJD44H11
135
MJD45H11
500
ns
(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD44H11_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44H11_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD44H11_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power transistors
MJD44H11_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD44H11-001 功能描述:兩極晶體管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2