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參數(shù)資料
| 型號： | MJD44H11 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Power Transistors(互補(bǔ)型功率晶體管) |
| 中文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 76K |
| 代理商： | MJD44H11 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 7
1
Publication Order Number:
MJD44H11/D
MJD44H11 (NPN)
MJD45H11 (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage
V
CE(sat)
= 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
PbFree Packages are Available
8000 V
400 V
MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
EB
I
C
Max
80
5
8
16
Unit
Vdc
Vdc
Adc
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
Continuous
Peak
Total Power Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
Total Power Dissipation (Note 1)
@ T
A
= 25
°
C
Derate above 25
°
C
Operating and Storage Junction
Temperature Range
P
D
20
0.16
W
W/
°
C
W
P
D
1.75
0.014
W/
°
C
°
C
T
J
, T
stg
55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
JC
R
JA
Max
6.25
71.4
Unit
°
C/W
°
C/W
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
(Note 1)
Lead Temperature for Soldering
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
T
L
260
°
C
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS, 20 WATTS
DPAK3
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAMS
Preferred
devices are recommended choices for future use
and best overall value.
Y
WW
J4xH11
= Year
= Work Week
=
Device Code
x = 4 or 5
=
PbFree Package
G
1 2
3
4
YWW
J4
xH11G
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
1
23
4
YWW
J4
xH11G
http://onsemi.com
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| MJD45H11 | Complementary Power Transistors(互補(bǔ)功率晶體管) |
| MJD50 | High Voltage Power Transistors(高電壓功率晶體管) |
| MJE170 | Complementary Plastic Silicon Power Transistors(互補(bǔ)型硅功率晶體管) |
| MJE180 | Complementary Plastic Silicon Power Transistors(互補(bǔ)型硅功率晶體管) |
| MJE253 | Complementary Silicon Power Plastic Transistors(互補(bǔ)型硅功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD44H11_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS |
| MJD44H11_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD44H11_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power transistors |
| MJD44H11_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD44H11-001 | 功能描述:兩極晶體管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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