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參數(shù)資料
| 型號(hào)： | MJD350 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS |
| 中文描述： | 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C, DPAK-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 194K |
| 代理商： | MJD350 |
3
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1
0.01
0.01
0.5
0.2
0.1
0.07
0.05
0.02
r
0.05
1
2
5
10
20
50
100
200
1 k
500
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 8.33
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
SINGLE PULSE
0.1
0.7
0.3
0.03
0.02
0.1
0.5
0.2
Figure 5. Thermal Response
R
0.03
0.3
3
30
300
0.01
I
1000
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1
20
30
50
70
100
200
500
300
500
μ
s
Figure 6. Active Region Safe Operating Area
200 300
500 700 1000
100
20
50
30
10
2
5
3
1 ms
dc
100
μ
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 5. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 7. Power Derating
25
25
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
20
15
10
5
P
2.5
0
2
1.5
1
0.5
TA
TC
TC
TA (SURFACE MOUNT)
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| MJD350T4 | SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS |
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| MJD340T4 | SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD350-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS |
| MJD350-13 | 功能描述:兩極晶體管 - BJT HIGH VOLTAGE PNP SMT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD350G | 功能描述:兩極晶體管 - BJT 0.5A 300V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD350T4 | 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD350T4G | 功能描述:兩極晶體管 - BJT 0.5A 300V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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