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參數(shù)資料
| 型號： | MJD350 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS |
| 中文描述： | 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C, DPAK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 194K |
| 代理商： | MJD350 |
2
Motorola Bipolar Power Transistor Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
300
10
1
100
50
3
20
30
50
70
100
200
300
500
200
70
30
20
2
5
10
7
h
TJ = 150
°
C
+25
°
C
VCE = 2 V
VCE = 10 V
–55
°
C
+100
°
C
TYPICAL CHARACTERISTICS
MJD340
V
1
10
Figure 2. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0
20
30
50
100
200
500
0.4
0.8
0.6
0.2
300
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
IC/IB = 5
MJD340
1
5
0
7
10
20
30
100
200
0.8
0.6
50
70
300
500
0.4
0.2
1
200
5
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
10
7
10
20
30
100
200
Figure 4. “On” Voltages
IC, COLLECTOR CURRENT (mA)
100
70
V
20
50
70
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
TJ = 150
°
C
25
°
C
VCE = 2 V
VCC = 10 V
–55
°
C
300
500
h
50
30
IC/IB = 10
IC/IB = 5
VCE(sat)
MJD350
MJD350
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