參數(shù)資料
型號(hào): MJD350T4
廠商: MOTOROLA INC
元件分類(lèi): 功率晶體管
英文描述: SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
中文描述: 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 194K
代理商: MJD350T4
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier, switchmode power supply drivers
and other switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular MJE340 and MJE350
300 V (Min) — VCEO(sus)
— Peak
0.75
Total Power Dissipation @ TC = 25 C
PD
15
Watts
Temperature Range
* When surface mounted on minimum pad sizes recommended.
(1) Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD340/D
SILICON
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS
15 WATTS
*Motorola Preferred Device
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
CASE 369A–13
CASE 369–07
相關(guān)PDF資料
PDF描述
MJD340-1 SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD340T4 SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD350 SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD350-1 SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD340TF High Voltage Power Transistors D-PAK for Surface Mount Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD350T4G 功能描述:兩極晶體管 - BJT 0.5A 300V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD350TF 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD361T4-A 功能描述:兩極晶體管 - BJT LV Complimentary 60V Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD41C 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Complementary Power Transistors
MJD41C_06 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Complementary Power Transistors