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參數(shù)資料
| 型號： | MJD32 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Power Transistors(互補型功率晶體管) |
| 中文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | MJD32 |
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD340 | High Voltage Power Transistors(高電壓功率晶體管) |
| MJD44E3 | Darlington Power Transistor(達林頓功率晶體管) |
| MJD44H11 | Complementary Power Transistors(互補型功率晶體管) |
| MJD45H11 | Complementary Power Transistors(互補功率晶體管) |
| MJD50 | High Voltage Power Transistors(高電壓功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD32/32C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
| MJD32-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS |
| MJD32B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD32BT4 | 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32BTF | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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