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參數(shù)資料
| 型號： | MJD32 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Power Transistors(互補(bǔ)型功率晶體管) |
| 中文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | MJD32 |
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
3
0.03
I
C
, COLLECTOR CURRENT (AMPS)
5
0.07
0.3
3
70
50
30
300
h
V
CE
= 2 V
T
J
= 150
°
C
100
0.1
0.7
25
°
C
55
°
C
0.05
0.5
1
25
25
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
20
15
10
5
P
Figure 2. Switching Time Test Circuit
Figure 3. DC Current Gain
3
2
0.03
I
C
, COLLECTOR CURRENT (AMPS)
0.03
0.05 0.07 0.1
0.2
0.5 0.7
3
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′
= t
s
1/8 t
f
T
J
= 25
°
C
t
0.3
1
0.7
0.5
0.3
0.2
t
s
′
0.1
0.07
0.05
1
2
Figure 4. TurnOn Time
2
I
C
, COLLECTOR CURRENT (AMPS)
0.02
I
C
/I
B
= 10
T
J
= 25
°
C
t
1
0.7
0.5
0.3
0.1
0.07
0.05
0.03
0.003
Figure 5. “On” Voltages
I
C
, COLLECTOR CURRENT (AMPS)
1
0.8
V
1.4
1.2
0.4
0
+11 V
25 s
0
9 V
R
B
4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
51
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
MSD6100 USED BELOW I
REVERSE ALL POLARITIES FOR PNP.
B
≈
100 mA
B
≈
100 mA
500
7
10
0.03
0.07
0.3
3
0.1
0.7
0.05
0.5
1
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
t
d
@ V
BE(off)
= 2 V
0.6
0.2
0.005
0.01 0.02 0.03 0.05
0.1
0.20.3
0.5
1
2
3
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2 V
V
CE(sat)
@ I
C
/I
B
= 10
t
f
@ V
CC
= 30 V
t
f
@ V
CC
= 10 V
2.5
0
2
1.5
1
0.5
T
A
T
C
Figure 6. TurnOff Time
T
A
(SURFACE MOUNT)
T
C
TYPICAL CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD340 | High Voltage Power Transistors(高電壓功率晶體管) |
| MJD44E3 | Darlington Power Transistor(達(dá)林頓功率晶體管) |
| MJD44H11 | Complementary Power Transistors(互補(bǔ)型功率晶體管) |
| MJD45H11 | Complementary Power Transistors(互補(bǔ)功率晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD32/32C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
| MJD32-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS |
| MJD32B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD32BT4 | 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32BTF | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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