參數(shù)資料
型號(hào): MJD32-1
廠商: ON SEMICONDUCTOR
元件分類(lèi): 功率晶體管
英文描述: 3 A, 40 V, PNP, Si, POWER TRANSISTOR
封裝: PLASTIC, CASE 369-07, 3 PIN
文件頁(yè)數(shù): 21/61頁(yè)
文件大?。?/td> 394K
代理商: MJD32-1
Outline Dimensions and Leadform Options
5–6
Motorola Bipolar Power Transistor Device Data
Leadform Options — TO–220 (Case 221A)
Leadform options require assignment of a special part number before ordering.
Contact your local Motorola representative for special part number and pricing.
10,000 piece minimum quantity orders are required.
Leadform orders are non–cancellable after processing.
Leadforms apply to both Motorola Case 221A–04 and 221A–06 except as noted.
LEADFORM BC
LEADFORM AS
.100 REF.
.20 REF.
.125
± .010
0.100 TYP.
MOUNTING
SURFACE
0.750 MAX.
.736
± .010
.620
± .015
.950 MIN.
1.00 MIN.
LEADFORM AJ
CASE
221A–04
221A–06
A
0.360
± 0.010
.100 REF.
.200 REF.
.050 REF.
.06R
.017
± .004
Lead Not Trimmed
0.300 Min.
.580
± .010
.765
± .01
A
LEADFORM AU
CASE
221A–04
221A–06
A
0.920 Min.
0.885 Min.
LEADFORM 3 LEADS
.190
± .020
.095 REF.
.574
± .01
A
相關(guān)PDF資料
PDF描述
MJE13005BU 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005BD 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005AN 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005AJ 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005AF 4 A, 400 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD32B 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJD32BT4 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD32BTF 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD32C 功能描述:兩極晶體管 - BJT 3A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD32C1 功能描述:兩極晶體管 - BJT 3A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2