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參數(shù)資料
| 型號： | MJD2955-I |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | IPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 175K |
| 代理商： | MJD2955-I |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD295
5
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300ms, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
- 70
V
VCEO
Collector-Emitter Voltage
- 60
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current
- 10
A
IB
Base Current
- 6
A
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
IC = - 30mA, IB = 0
-60
V
ICEO
Collector Cut-off Current
VCE = - 30V, IE = 0
- 50
A
ICBO
Collector Cut-off Current
VCB = - 70V, IE = 0
- 2
mA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
- 0.5
mA
hFE
* DC Current Gain
VCE = - 4V, IC = - 4A
VCE = - 4V, IC = -10A
20
5
100
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 4A, IB = - 0.4A
IC = - 10A, IB = - 3.3A
- 1.1
- 8
V
VBE(on)
* Base-Emitter ON Voltage
VCE = - 4V, IC = - 4A
-1.8
V
fT
Current Gain Bandwidth Product
VCE = - 10V, IC = - 500mA
2
MHz
MJD2955
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ -I “ Suffix)
Electrically Similar to Popular MJE2955T
DC Current Gain Specified to 10A
High Current Gain - Bandwidth Product:
fT = 2MHz (MIN), IC = -500mA
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
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PDF描述 |
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| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29-T1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29C-T1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD3055-I | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD2955T4 | 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD2955T4 | 制造商:STMicroelectronics 功能描述:Bipolar Transistor |
| MJD2955T4G | 功能描述:兩極晶體管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD2955TF | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD29C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
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