- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95947 > MJD200-1 (ON SEMICONDUCTOR) 5 A, 25 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MJD200-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 25 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369-07, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | MJD200-1 |
Complementary
Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface
Mount Applications
. . . designed for low voltage, low–power, high–gain audio amplifier
applications.
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain —
hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2 Adc
= 10 (Min) @ IC = 5 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current–Gain — Bandwidth Product —
fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage —
ICBO = 100 nAdc @ Rated VCB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Base Voltage
VCB
40
Vdc
Collector–Emitter Voltage
VCEO
25
Vdc
Emitter–Base Voltage
VEB
8
Vdc
Collector Current — Continuous
Peak
IC
5
10
Adc
Base Current
IB
1
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
12.5
0.1
Watts
W/
_C
Total Device Dissipation @ TA = 25_C*
Derate above 25
_C
PD
1.4
0.011
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 4
1
Publication Order Number:
MJD200/D
MJD200
MJD210
CASE 369A–13
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS
12.5 WATTS
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
NPN
PNP
0.243 6.172
0.063 1.6
0.1
18
3.0
0.100 2.54
0.165 4.191
0.190 4.826
inches
mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD210I | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| MJD2955-I | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29-T1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD200G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200G | 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR |
| MJD200RL | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200RLG | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200T4 | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。