- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98015 > MJD13003 (ON SEMICONDUCTOR) 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MJD13003 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 369A-13, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 133K |
| 代理商： | MJD13003 |
MJD13003
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
—
—
0.1
2
mAdc
Emitter Cutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
—
—
1
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 11
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 12
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.5 Adc, VCE = 2 Vdc)
(IC = 1 Adc, VCE = 2 Vdc)
hFE
8
5
—
40
25
—
Collector–Emitter Saturation Voltage
(IC = 0.5 Adc, IB = 0.1 Adc)
(IC = 1 Adc, IB = 0.25 Adc)
(IC = 1.5 Adc, IB = 0.5 Adc)
(IC = 1 Adc, IB = 0.25 Adc, TC = 100_C)
VCE(sat)
—
—
0.5
1
3
1
Vdc
Base–Emitter Saturation Voltage
(IC = 0.5 Adc, IB = 0.1 Adc)
(IC = 1 Adc, IB = 0.25 Adc)
(IC = 1 Adc, IB = 0.25 Adc, TC = 100_C)
VBE(sat)
—
—
1
1.2
1.1
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, f = 1 MHz)
fT
4
10
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
—
21
—
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
td
—
0.05
0.1
s
Rise Time
VCC = 125 Vdc, IC = 1 A,
I
02A t
25
s
tr
—
0.5
1
s
Storage Time
IB1 = IB2 = 0.2 A, tp = 25 s,
Duty Cycle 1%
ts
—
2
4
s
Fall Time
Duty Cycle 1%
tf
—
0.4
0.7
s
Inductive Load, Clamped (Table 1, Figure 13)
Storage Time
IC = 1 A, Vclamp = 300 Vdc,
tsv
—
1.7
4
s
Crossover Time
IC = 1 A, Vclamp = 300 Vdc,
IB1 = 0.2 A, VBE(off) = 5 Vdc,
tc
—
0.29
0.75
s
Fall Time
B1
,
BE(off)
,
TC = 100_C
tfi
—
0.15
—
s
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle v 2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD13003T4 | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJD18002D2-1 | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJD32-1 | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| MJE13005BU | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13005BD | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD148 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistor |
| MJD148_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistor |
| MJD148T4 | 功能描述:兩極晶體管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD148T4G | 功能描述:兩極晶體管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD18002D2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。