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參數(shù)資料
| 型號： | MJ10016 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS(50A,400-500V,250W) |
| 中文描述： | 50 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 217K |
| 代理商： | MJ10016 |
5
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 7 and 8 are
specified ratings for these devices under the test conditions
shown.
1.0
Figure 7. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
50
0.005
50
20
10
2.0
1.0
0.5
5.0
1000
10
100
0
Figure 8. Reverse Bias Switching Safe
Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0
200
300
40
20
50
400
TC = 25
°
C
I
0.1
0.05
200
dc
I
2.0
20
500
30
10
0.2
0.02
0.01
500
VBE(off) = 5.0 V
TC = 25
°
C
MJ10015
MJ10016
TURN–OFF LOAD LINE
BOUNDARY FOR MJ10016
THE LOCUS FOR MJ10015
IS 100 V LESS
10
μ
s
IC
IB1
10
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
100
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two Iimitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 7 is based on TC = 25 C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
≥
25 C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 7 may be found at any case tem-
perature by using the appropriate curve on Figure 9.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 8 gives the complete RBSOA
characteristics.
0
Figure 9. Power Derating
TC, CASE TEMPERATURE (
°
C)
0
40
80
80
40
100
120
P
160
200
60
20
THERMAL
DERATING
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
1
2
3
4
5
6
10
8
6
5
4
3
2
0
,
I
0
SEE TABLE 1 FOR CONDITIONS,
FIGURE 6 FOR WAVESHAPE.
9
7
1
7
8
Figure 10. Typical Reverse Base Current
versus VBE(off) With No External Base
Resistance
IC = 20 A
FORWARD BIAS
SECOND BREAKDOWN
DERATING
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10016 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 500V TO-3 |
| MJ10016 | 制造商:NTE Electronics 功能描述:DARLINGTON BIPOLAR TRANSISTOR |
| MJ1001F | 制造商:Ohmite Mfg Co 功能描述:Res Metal Film 1K Ohm 1% 1/8W ±50ppm/°C Conformal AXL Thru-Hole Ammo Pack |
| MJ1001FE | 制造商:Ohmite Mfg Co 功能描述:Resistor;Metal Film;Res 1 Kilohms;Pwr-Rtg 0.125 W;Tol 1%;Axial;Epoxy |
| MJ10020 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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