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參數(shù)資料
| 型號(hào)： | MJ10016 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS(50A,400-500V,250W) |
| 中文描述： | 50 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 217K |
| 代理商： | MJ10016 |
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS (1)
MJ10016
Collector Cutoff Current
500
—
—
—
—
0.25
mAdc
(IC = 20 Adc, VCE = 5.0 Vdc)
(IC = 50 Adc, IB = 10 Adc)
25
—
—
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.0 Adc)
—
—
—
—
5.0
2.75
Vdc
Diode Forward Voltage (2)
Vf
—
2.5
5.0
Vdc
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Storage Time
Fall Time
Rise Time
td
tr
tf
—
—
0.14
0.3
0.3
1.0
μ
s
μ
s
μ
s
(VCC = 250 Vdc, IC = 20 A,
—
0.8
2.5
μ
s
—
0.3
1.0
Inductive Load, Clamped (Table 1)
μ
s
Storage Time
Crossover Time
VBE(off) = 5.0 Vdc)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
(2)
Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
tsv
tc
—
—
1.0
0.36
2.5
1.0
μ
s
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10016 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 500V TO-3 |
| MJ10016 | 制造商:NTE Electronics 功能描述:DARLINGTON BIPOLAR TRANSISTOR |
| MJ1001F | 制造商:Ohmite Mfg Co 功能描述:Res Metal Film 1K Ohm 1% 1/8W ±50ppm/°C Conformal AXL Thru-Hole Ammo Pack |
| MJ1001FE | 制造商:Ohmite Mfg Co 功能描述:Resistor;Metal Film;Res 1 Kilohms;Pwr-Rtg 0.125 W;Tol 1%;Axial;Epoxy |
| MJ10020 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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