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參數(shù)資料
| 型號： | MJ1000 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁數(shù)： | 12/59頁 |
| 文件大?。?/td> | 361K |
| 代理商： | MJ1000 |
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MJ1000 MJ1001
3–424
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0)
MJ1000
MJ1001
V(BR)CEO
60
80
—
Vdc
Collector Emitter Leakage Current
(VCB = 60 Vdc, RBE = 1.0k ohm)
MJ1000
(VCB = 80 Vdc, RBE = 1.0k ohm)
MJ1001
(VCB = 60 Vdc, RBE = 1.0k ohm, TC = 150_C)
MJ1000
(VCB = 80 Vdc, RBE = 1.0k ohm, TC = 150_C)
MJ1001
ICER
—
1.0
5.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
2.0
mAdc
Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
MJ1000
(VCE = 40 Vdc, IB = 0)
MJ1001
ICEO
—
500
Adc
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
hFE
1000
750
—
—
Collector Emitter Saturation Voltage(1)
(IC = 30 Adc, IB = 12 mAdc)
(IC = 8.0 Adc, IB = 40 mAdc)
VCE(sat)
—
2.0
4.0
Vdc
Base Emitter Voltage(1) (IC = 3.0 Adc, VCE = 3.0 Vdc)
VBE(on)
—
2.5
Vdc
(1)Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
I C
,COLLECT
OR
CURRENT
(AMPS)
1.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
10
5.0
1.0
0.7
0.5
3.5
IC, COLLECTOR CURRENT (AMP)
3.0
2.5
2.0
1.5
1.0
0.5
0.3
50,000
0.01
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
50
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
10,000
5000
2000
Figure 3. Small–Signal Current Gain
f, FREQUENCY (Hz)
30
1000
20,000
h
FE
,DC
C
URREN
T
GAIN
1000
500
200
TJ = 200°C
Figure 4. “On” Voltages
50
0.01
0.02
0.05
0.5
1.0
10
2.0
5.0
0.2
Figure 5. DC Safe Operating Area
3000
2000
500
0
25
°C
TC = 25°C
TJ = 25°C
TJ = 150°C
h
fe
,SMALL–SIGNAL
CURRENT
GAIN
100
VBE(sat) @ IC/IB = 250
SECONDARY BREAKDOWN
LIMITATION
THERMAL LIMITATION @ TC = 25°C
BONDING WIRE LIMITATION
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
V,
V
OL
TAGE
(
V
OL
T
S
)
300
200
100
50
VCE = 3.0 Vdc
IC = 3.0 Adc
MJ1000
0.1
7.0
20
100
30
70
5.0
3.0
10
3.0
2.0
0.2
0.1
7.0
–55
°C
VCE = 3.0 V
103
106
105
104
MJ1001
There we two limitations on the power handling ability of a
transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tion; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
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| MJ2500 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ1000_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:COMPLEMENTARY POWER DARLINGTONS |
| MJ10000 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 450V 20A T 制造商:SOLID STATE 功能描述:DARLINGTON TRANSISTOR, NPN, 450V, 20A, T 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 450V, 20A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:600; Operating Temperature Min:-65C ;RoHS Compliant: Yes |
| MJ10001 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; Operating Temperature Max:200C ;RoHS Compliant: Yes |
| MJ10002 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| MJ10003 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
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