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參數(shù)資料
| 型號： | MJ10009 |
| 廠商： | 永盛國際集團(tuán) |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 235K |
| 代理商： | MJ10009 |
5
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
SWITCHING TIMES NOTE
(continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222.
PSWT = 1/2 VCC IC (tc) f
Typical inductive switching waveforms are shown in Fig-
ure 7. In general, trv + tfi
rents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100 C.
tc. However, at lower test cur-
2
Figure 8. Turn-On Time
IC, COLLECTOR CURRENT (AMP)
t
μ
0.1
VCC = 250 V
IC/IB = 20
TJ = 25
°
C
td
tr
1.0
Figure 9. Turn-Off Time
IC, COLLECTOR CURRENT (AMP)
t
μ
0.5
0.1
0.05
VCC = 250 V
IC/IB = 20
VBE(off) = 5 V
TJ = 25
°
C
tf
ts
0.2
tP = 25
μ
s, DUTY CYCLE
2%
tP = 25
μ
s, DUTY CYCLE
2%
1
0.2
0.5
20
1
5
2
10
20
1
5
2
10
RESISTIVE SWITCHING PERFORMANCE
Figure 10. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
0.01
0.01
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1 k
500
Z
θ
JC (t) = r(t) R
θ
JC
R
θ
JC = 1.0
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r
(
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