參數(shù)資料
型號： MJ1000
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： Medium-Power Complementary Silicon Transistors
中文描述： 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件頁數(shù)： 1/4頁
文件大?。?/td> 139K
代理商： MJ1000
1
Motorola Bipolar Power Transistor Device Data
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc
Monolithic Construction with Built–in Base–Emitter Shunt Resistors
Collector–Emitter Voltage
Collector–Base Voltage
VCEO
VCB
VEB
IC
80
80
Vdc
Vdc
Emitter–Base Voltage
5.0
60
Vdc
60
Collector Current
10
Adc
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈
4.0 k
≈
60
PNP
MJ900
MJ901
BASE
EMITTER
COLLECTOR
≈
4.0 k
≈
60
NPN
MJ1000
MJ1001
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ1000/D
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60–80 VOLTS
90 WATTS
*Motorola Preferred Device
CASE 1–07
(TO–3)
REV 7
相關(guān)PDF資料
PDF描述
MJ1001 Medium-Power Complementary Silicon Transistors
MJ10012 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS
MJ10012 NPN SILICON POWER DARLINGTON TRANSISTORS
MJ10012 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
MJH10012 POWER TRANSISTORS DARLINGTON NPN SILICON
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ1000_12 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:COMPLEMENTARY POWER DARLINGTONS
MJ10000 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 450V 20A T 制造商:SOLID STATE 功能描述:DARLINGTON TRANSISTOR, NPN, 450V, 20A, T 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 450V, 20A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:600; Operating Temperature Min:-65C ;RoHS Compliant: Yes
MJ10001 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; Operating Temperature Max:200C ;RoHS Compliant: Yes
MJ10002 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
MJ10003 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
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