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參數(shù)資料
| 型號(hào)： | MIC5021BN |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Replaced by PTN78060W : |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 132K |
| 代理商： | MIC5021BN |
October 1998
5-171
MIC5021
Absolute Maximum Ratings
Supply Voltage (V
DD
) ..................................................+40V
Input Voltage ................................................ –0.5V to +15V
Sense Differential Voltage..........................................
±
6.5V
Sense + or Sense – to Gnd.......................... –0.5V to +36V
Timer Voltage (C
T
) .....................................................+5.5V
V
BOOST
Capacitor ....................................................0.01
μ
F
Micrel
5
Electrical Characteristics
T
A
= 25
°
C, Gnd = 0V, V
DD
= 12V, C
T
= Open, Gate C
L
= 1500pF (IRF540 MOSFET) unless otherwise specified
Symbol
Parameter
Condition
Min
Typ
Max
Units
D.C. Supply Current
V
DD
= 12V, Input = 0V
V
DD
= 36V, Input = 0V
V
DD
= 12V, Input = 5V
V
DD
= 36V, Input = 5V
1.8
4
mA
2.5
6
mA
1.7
4
mA
2.5
6
mA
Input Threshold
0.8
1.4
2.0
V
Input Hysteresis
0.1
V
Input Pull-Down Current
Input = 5V
10
20
40
μ
A
Current Limit Threshold
Note 1
30
50
70
mV
Gate On Voltage
V
DD
= 12V
Note 2
V
DD
= 36V
Note 2
Sense Differential > 70mV
16
18
21
V
46
50
52
V
t
G(ON)
t
G(OFF)
t
DLH
t
R
t
DLH
t
F
f
max
Gate On Time, Fixed
2
6
10
μ
s
Gate Off Time, Adjustable
Sense Differential > 70mV, C
T
= 0pF
Note 3
10
20
50
μ
s
Gate Turn-On Delay
500
1000
ns
Gate Rise Time
Note 4
400
500
ns
Gate Turn-Off Delay
Note 5
800
1500
ns
Gate Fall Time
Note 6
400
500
ns
Maximum Operating Frequency
Note 7
100
150
kHz
Note 1
Note 2
Note 3
Note 4
Note 5
Note 6
Note 7
When using sense MOSFETs, it is recommended that R
SENSE
< 50
. Higher values may affect the sense MOSFET’s current transfer ratio.
DC measurement.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V.
Frequency where gate on voltage reduces to 17V with 50% input duty cycle.
Operating Ratings
Supply Voltage (V
DD
) .................................... +12V to +36V
Temperature Range
PDIP....................................................... –40
°
C to +85
°
C
SOIC ...................................................... –40
°
C to +85
°
C
相關(guān)PDF資料 |
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|---|---|
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