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參數(shù)資料
| 型號： | MIC5021BN |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Replaced by PTN78060W : |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 132K |
| 代理商： | MIC5021BN |
MIC5021
Pin Configuration
Micrel
5-170
October 1998
Pin Description
Pin Number
Pin Name
Pin Function
1
V
DD
Input
Supply: +12V to +36V. Decouple with
≥
10
μ
F capacitor.
2
TTL Compatible Input: Logic high turns the external MOSFET on. An
internal pull-down returns an open pin to logic low.
3
C
T
Retry Timing Capacitor: Controls the off time (t
G(OFF)
) of the overcurrent
retry cycle. (Duty cycle adjustment.)
Open = approx. 20% duty cycle.
Capacitor to Ground = approx. 20% to < 1% duty cycle.
Pull-up resistor = approx. 20% to approx. 75% duty cycle.
Ground = maintained shutdown upon overcurrent condition.
4
Gnd
Circuit Ground
5
Sense +
Current Sense Comparator (+) Input: Connect to high side of sense resistor
or current sensing MOSFET sense lead. A built-in offset in conjunction with
R
SENSE
sets the load overcurrent trip point.
Current Sense Comparator (–) Input: Connect to the low side of the sense
resistor (usually the high side of the load).
6
Sense –
7
Gate
Gate Drive: Drives the gate of an external power MOSFET. Also limits V
GS
to 15V max. to prevent Gate-to-Source damage. Will sink and source
current.
8
V
BOOST
Charge Pump Boost Capacitor: A bootstrap capacitor from V
BOOST
to the
FET source pin supplies charge to quickly enhance the Gate output during
turn-on.
1
2
3
4
8
7
6
5
V
DD
Input
C
T
Gnd
V
BOOST
Gate
Sense
Sense
+
1
2
3
4
8
7
6
5
V
BOOST
Gate
Sense
Sense
+
V
DD
Input
C
T
Gnd
Block Diagram
Sense –
Sense +
6V Internal Regulator
C
INT
I
1
2I
1
50mV
Input
ONE-
SHOT
Gate
C
T
V
DD
6V
OFF
ON
Fault
Normal
I
2
10I
2
15V
Q1
CHARGE
PUMP
V
BOOST
↓
↑
Transistor: 106
DIP Package
(N)
SOIC Package
(M)
相關PDF資料 |
PDF描述 |
|---|---|
| MIC5031 | High-Speed High-Side MOSFET Driver(高速高邊MOS場效應管驅動器) |
| MIC5031BM | High-Speed High-Side MOSFET Driver |
| MIC50398 | Replaced by PTN78060W,PTN78060H : |
| MIC50398CN | Replaced by PTN78060W,PTN78060H : |
| MIC50399CN | Replaced by PTN78060W,PTN78060H : |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5021YM | 功能描述:功率驅動器IC High Speed High Side MOSFET Driver - Lead Free RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC5021YM TR | 功能描述:功率驅動器IC High Speed High Side MOSFET Driver - Lead Free RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC5021YM | 制造商:Micrel Inc 功能描述:Temperature Sensor IC 制造商:Micrel Inc 功能描述:IC, MOSFET DRIVER, HIGH SIDE, SOIC-8 |
| MIC5021YM-TR | 功能描述:IC DRIVER MOSFET HISIDE HS 8SOIC 制造商:microchip technology 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 驅動配置:高壓側 通道類型:單路 驅動器數(shù):1 柵極類型:IGBT，N 溝道 MOSFET 電壓 - 電源:12 V ~ 36 V 邏輯電壓?- VIL，VIH:0.8V，2V 電流 - 峰值輸出（灌入，拉出）:- 輸入類型:非反相 高壓側電壓 - 最大值（自舉）:- 上升/下降時間（典型值）:400ns，400ns 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商器件封裝:8-SOIC 標準包裝:1 |
| MIC5021YN | 功能描述:功率驅動器IC High Speed High Side MOSFET Driver - Lead Free RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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