參數(shù)資料
型號： MHV5IC1810NR2
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： RF LDMOS Wideband Integrated Power Amplifier
中文描述： 射頻LDMOS寬帶集成功率放大器
文件頁數(shù)： 2/16頁
文件大?。?/td> 401K
代理商： MHV5IC1810NR2
2
RF Device Data
Freescale Semiconductor
MHV5IC1810NR2
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Storage Temperature Range
T
stg
-65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
Input Power
P
in
12
dBm
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
Final Application
(P
out
= 10 W CW)
Stage 1, 28 Vdc, I
DQ1
= 120 mA
Stage 2, 28 Vdc, I
DQ2
= 90 mA
Driver Application
(P
out
= 2.25 W CW)
Table 3. ESD Protection Characteristics
Stage 1, 28 Vdc, I
DQ1
= 120 mA
Stage 2, 28 Vdc, I
DQ2
= 90 mA
R
θ
JC
9.2
3.3
10
3.5
°
C/W
Test Methodology
Class
Human Body Model (per JESD22-A114)
0 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Wideband 1930-1990 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 120 mA, I
DQ2
= 90 mA,
P
out
= 5 W Avg., f1 = 1990 MHz, f2 = 1990.1 MHz, Two-Tone Test
Power Gain
G
ps
26.5
29
—
dB
Power Added Efficiency
PAE
25
29
—
%
Intermodulation Distortion
IMD
—
-34
-27
dBc
Input Return Loss
IRL
—
-
10
dB
Typical
Two-Tone Performances
(In Freescale Test Fixture, 50
ο
hm system) V
DD
= 28 Vdc, I
DQ1
= 120 mA, I
DQ2
= 90 mA, P
out
=
5 W Avg., 1805-1880 MHz
Power Gain
G
ps
—
29
—
dB
Power Added Efficiency
PAE
—
29
—
%
Intermodulation Distortion
IMD
—
-34
—
dBc
Input Return Loss
IRL
—
-15
—
dB
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50
ο
hm system) V
DD
= 28 Vdc, I
DQ1
= 105 mA, I
DQ2
= 95 mA,
P
out
= 3.2 W Avg., 1805-1880 MHz or 1930-1990 MHz EDGE Modulation
Power Gain
G
ps
—
29
—
dB
Error Vector Magnitude
EVM
—
1.1
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
-67
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-76
—
dBc
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
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