參數(shù)資料
型號: MHL21336N
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: 3G Band RF Linear LDMOS Amplifier
中文描述: 3G頻段射頻線性LDMOS的放大器
文件頁數(shù): 1/5頁
文件大?。?/td> 117K
代理商: MHL21336N
MHL21336N
1
RF Device Data
Freescale Semiconductor
3G Band
RF Linear LDMOS Amplifier
Designed for ultra-linear amplifier applications in
50 ohm system
s operating in
the 3G frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital CDMA modulation systems.
Third Order Intercept: 45 dBm Typ
Power Gain: 31 dB Typ (@ f = 2140 MHz)
Input VSWR
1.5:1
Features
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
N Suffix Indicates Lead-Free Terminations
Table 1. Absolute Maximum Ratings
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
30
Vdc
RF Input Power
P
in
+5
dBm
Storage Temperature Range
T
stg
- 40 to +100
°
C
Operating Case Temperature Range
T
C
- 20 to +100
°
C
Table 2. Electrical Characteristics
(V
DD
= 26 Vdc, T
C
= 25
°
C; 50
Ω
System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
I
DD
500
525
mA
Power Gain
(f = 2140 MHz)
G
p
30
31
33
dB
Gain Flatness
(f = 2110 - 2170 MHz)
G
F
0.15
0.4
dB
Power Output @ 1 dB Compression
(f = 2140 MHz)
P1dB
34
35
dBm
Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz)
ITO
44
45
dBm
Noise Figure
(f = 2170 MHz)
NF
4.5
5
dB
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MHL21336N
Rev. 7, 8/2006
Freescale Semiconductor
Technical Data
2110-2170 MHz
3.0 W, 31 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP-02, STYLE 1
MHL21336N
Freescale Semiconductor, Inc., 2006. All rights reserved.
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