參數(shù)資料
型號: MHPA19010N
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: PCS Band RF Linear LDMOS Amplifier
中文描述: PCS頻段的射頻線性LDMOS的放大器
文件頁數(shù): 1/8頁
文件大?。?/td> 140K
代理商: MHPA19010N
MHPA19010N
1
RF Device Data
Freescale Semiconductor
PCS Band
RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in
50 ohm system
s operating in
the PCS frequency band. A silicon FET design provides outstanding linearity
and gain. In addition, the excellent group delay and phase linearity characteris-
tics are ideal for digital modulation systems, such as TDMA and CDMA.
Typical CDMA Performance: 1960 MHz, 28 Volts
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Adjacent Channel Power: -51 dBc @ 30 dBm, 885 kHz Channel Spacing
Power Gain: 24.5 dB Min (@ f = 1960 MHz)
0.2 dB Typical Gain Flatness
Features
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
N Suffix Indicates Lead-Free Terminations
Table 1. Maximum Ratings
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
30
Vdc
RF Input Power (Single Carrier CW)
P
in
+20
dBm
Storage Temperature Range
T
stg
- 40 to +100
°
C
Operating Case Temperature Range
T
C
- 20 to +100
°
C
Quiescent Bias Current
I
DQ
750
mA
Table 2. Electrical Characteristics
(V
DD
= 28 Vdc, V
BIAS
8 V Set for Supply Current of 600 mA, T
C
= 25
°
C, 50
Ω
System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
I
DD
600
mA
Power Gain
(f = 1960 MHz)
G
p
24.5
25
dB
Gain Flatness
(f = 1930 - 1990 MHz)
G
F
0.2
0.5
dB
Power Output @ 1 dB Comp.
(f = 1960 MHz)
P1dB
41.5
dBm
Input VSWR
(f = 1930 - 1990 MHz)
VSWR
in
1.5:1
2:1
Noise Figure
(f = 1960 MHz)
NF
8
10
dB
Adjacent Channel Power Rejection @ 30 dBm, 1.23 MHz BW,
885 kHz Channel Spacing
ACPR
-58
- 51
dBc
Document Number: MHPA19010N
Rev. 6, 5/2006
Freescale Semiconductor
Technical Data
MHPA19010N
1930-1990 MHz
10 W, 24.5 dB
RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP-02, STYLE 3
Freescale Semiconductor, Inc., 2006. All rights reserved.
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