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參數(shù)資料
| 型號(hào)： | MHL9838N |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | Cellular Band RF Linear LDMOS Amplifier |
| 中文描述： | 蜂窩頻段射頻線性LDMOS的放大器 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 80K |
| 代理商： | MHL9838N |
MHL9838N
1
RF Device Data
Freescale Semiconductor
Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra-linear amplifier applications in
50 ohm system
s operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA and CDMA.
Third Order Intercept: 50 dBm Typ
Power Gain: 31 dB Typ (@ f = 880 MHz)
Input and Output VSWR
1.5:1
Features
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
For Use in TDMA and CDMA Multi-Carrier Applications
N Suffix Indicates Lead-Free Terminations
Table 1. Absolute Maximum Ratings
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
30
Vdc
RF Input Power
P
in
+6
dBm
Storage Temperature Range
T
stg
- 40 to +100
°
C
Operating Case Temperature Range
T
C
- 20 to +100
°
C
Table 2. Electrical Characteristics
(V
DD
= 28 Vdc, T
C
= 25
°
C; 50
Ω
System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
I
DD
—
770
800
mA
Power Gain
(f = 880 MHz)
G
p
29.5
31
32.5
dB
Gain Flatness
(f = 800 - 925 MHz)
G
F
—
0.1
0.3
dB
Power Output @ 1 dB Compression
(f = 880 MHz)
P1dB
—
39
—
dBm
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
ITO
49
50
—
dBm
Noise Figure
(f = 925 MHz)
NF
—
3.7
4.5
dB
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MHL9838N
Rev. 7, 8/2006
Freescale Semiconductor
Technical Data
MHL9838N
800 - 925 MHz
8.0 W, 31 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP-02, STYLE 1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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