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參數(shù)資料
| 型號(hào)： | MGW14N60ED |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 18 A, 600 V, N-CHANNEL IGBT, TO-247AE |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 154K |
| 代理商： | MGW14N60ED |
6
Motorola IGBT Device Data
PACKAGE DIMENSIONS
CASE 340K–01
ISSUE A
NOTES:
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: MILLIMETER.
R
P
A
K
V
F
D
G
U
L
E
0.25 (0.010)
M
T B
M
0.25 (0.010)
M
Y Q
S
J
H
C
4
1
2
3
–T–
–B–
–Y–
–Q–
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
R
U
V
MIN
19.7
15.3
4.7
1.0
1.27 REF
2.0
5.5 BSC
2.2
0.4
14.2
5.5 NOM
3.7
3.55
5.0 NOM
5.5 BSC
3.0
MAX
20.3
15.9
5.3
1.4
MIN
0.776
0.602
0.185
0.039
0.050 REF
0.079
0.216 BSC
0.087
0.016
0.559
0.217 NOM
0.146
0.140
0.197 NOM
0.217 BSC
0.118
MAX
0.799
0.626
0.209
0.055
INCHES
MILLIMETERS
2.4
0.094
2.6
0.8
14.8
0.102
0.031
0.583
4.3
3.65
0.169
0.144
3.4
0.134
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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