參數(shù)資料
型號： MGW14N60ED
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Insulated Gate Bipolar Transistor
中文描述： 18 A, 600 V, N-CHANNEL IGBT, TO-247AE
文件頁數(shù)： 2/6頁
文件大?。?/td> 154K
代理商： MGW14N60ED
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25
μ
Adc)
Temperature Coefficient (Positive)
V(BR)CES
600
—
—
870
—
—
Vdc
mV/
°
C
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGE =
±
20 Vdc, VCE = 0 Vdc)
ON CHARACTERISTICS(1)
V(BR)ECS
ICES
15
—
—
Vdc
—
—
—
—
10
200
μ
Adc
IGES
—
—
50
μ
Adc
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125
°
C)
(VGE = 15 Vdc, IC = 10 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VCE(on)
—
—
—
1.6
1.5
2.0
1.9
—
2.4
Vdc
VGE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/
°
C
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc)
gfe
—
5.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Cies
Coes
Cres
—
1020
—
pF
Output Capacitance
—
104
—
Transfer Capacitance
—
17
—
SWITCHING CHARACTERISTICS(1)
Turn–On Delay Time
(VCC = 360 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300 H,
RG = 20
)
Energy losses include “tail”
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
—
38
—
ns
Rise Time
—
40
—
Turn–Off Delay Time
—
120
—
Fall Time
—
204
—
Turn–Off Switching Loss
—
0.35
0.45
mJ
Turn–On Switching Loss
—
0.27
0.35
Total Switching Loss
—
0.62
0.80
Turn–On Delay Time
(VCC = 360 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300 H,
RG = 20
,
TJ = 125 C)
Energy losses include “tail”
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
QT
Q1
Q2
—
32
—
ns
Rise Time
—
30
—
Turn–Off Delay Time
—
208
—
Fall Time
—
212
—
Turn–Off Switching Loss
—
0.63
—
mJ
Turn–On Switching Loss
—
0.40
—
Total Switching Loss
—
1.03
—
Gate Charge
(VCC = 360 Vdc, IC = 10 Adc,
VGE = 15 Vdc)
360 Vdc I
—
57
—
nC
—
12
—
—
25
—
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 5.0 Adc)
(IEC = 5.0 Adc, TJ = 125
°
C)
(IEC = 10 Adc)
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
VFEC
—
—
1.7
1.6
1.3
2.0
1.9
—
2.3
Vdc
(continued)
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