參數(shù)資料
型號: MGW14N60ED
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Insulated Gate Bipolar Transistor
中文描述: 18 A, 600 V, N-CHANNEL IGBT, TO-247AE
文件頁數(shù): 3/6頁
文件大?。?/td> 154K
代理商: MGW14N60ED
3
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS — continued
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
(IF = 10 Adc, VR
(F
dIF/dt = 200 A/
μ
s)
trr
ta
tb
75
ns
31
,
44
Reverse Recovery Stored Charge
QRR
trr
ta
tb
QRR
0.16
μ
C
Reverse Recovery Time
(IF = 10 Adc, VR
(F
dIF/dt = 200 A/
μ
s, TJ = 125
°
C)
139
ns
45
,
94
Reverse Recovery Stored Charge
0.40
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
from package to emitter bond pad)
LE
7.5
nH
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
6
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
30
20
10
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
8
0
10
0
13
17
5
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
30
20
10
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
–50
2.3
2.1
1.9
1.7
1.5
0
15
I
I
C
V
0
2
4
2
4
6
20
30
7
9
11
25
50
100
75
125
150
I
,
TJ = 25
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125
°
C
25
°
C
VCE = 100 V
5 s PULSE WIDTH
VGE = 15 V
80 s PULSE WIDTH
IC = 10 A
5.0 A
7.5 A
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