參數(shù)資料
型號: MGP4N60ED
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Insulated Gate Bipolar Transistor with Anti-Parallel Diode
中文描述: 6 A, 600 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù): 5/6頁
文件大?。?/td> 146K
代理商: MGP4N60ED
5
Motorola IGBT Device Data
Figure 11. Turn–Off Losses versus
Junction Temperature
Figure 12. Turn–Off Losses versus
Collector Current
Figure 13. Forward Characteristics
versus Current
Figure 14. Reverse Biased Safe
Operating Area
VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)
0.5
10
1
I
1
2
2.5
TJ = 125
°
C
25
°
C
1.5
C
3
2
3
0
IC, COLLECTOR CURRENT (AMPS)
0.10
0
1
0.15
0.05
0.20
TJ = 125
°
C
VCC = 360 V
VGE = 15 V
RG = 20
,
E
TJ, JUNCTION TEMPERATURE (
°
C)
150
–50
0.05
0
–25
0
25
0.10
0.20
0.15
50
75
100
125
VCC = 360 V
VGE = 15 V
RG = 20
IC = 3.0 A
2.0 A
1.5 A
,
E
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1
10
1
I
10
100
1000
TJ = 125
°
C
RGE = 20
VGE = 15 V
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