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參數(shù)資料
| 型號(hào)： | MGP4N60ED |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 146K |
| 代理商： | MGP4N60ED |
3
Motorola IGBT Device Data
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 1.25 Adc)
(IEC = 1.25 Adc, TJ = 125
°
C)
(IEC = 2.5 Adc)
VFEC
—
—
—
1.7
1.3
2.0
—
—
2.3
Vdc
Reverse Recovery Time
(IF = 2.5 Adc,
VR= 360 Vdc
VR = 360 Vdc,
dIF/dt = 200 A/ s)
2 5 Ad
trr
ta
—
39
—
ns
—
15
—
tb
—
24
—
Reverse Recovery Stored Charge
QRR
trr
ta
tb
QRR
—
51
—
nC
Reverse Recovery Time
(IF= 2 5 Adc
(IF = 2.5 Adc,
VR = 360 Vdc,
dIF/dt = 200 A/ s,
TJ= 125
TJ = 125
°
C)
—
68
—
ns
—
21
—
—
47
—
Reverse Recovery Stored Charge
—
115
—
nC
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
″
from package to emitter bond pad)
LE
—
7.5
—
nH
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
8
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
15
6
3
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
0
2
4
I
TJ = 25
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
12
9
6
8
0
15
6
3
0
2
4
TJ = 125
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
12
9
6
13
17
5
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
15
7.5
2.5
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
–50
2.0
1.8
1.6
1.4
0
15
I
C
V
7
9
11
25
50
100
75
125
150
,
TJ = 125
°
C
25
°
C
VCE = 100 V
5 s PULSE WIDTH
VGE = 15 V
80 s PULSE WIDTH
IC = 3.0 A
1.5 A
2.0 A
5.0
12.5
10
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