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參數(shù)資料
| 型號： | MGP4N60ED |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 146K |
| 代理商： | MGP4N60ED |
4
Motorola IGBT Device Data
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
45
5
RG, GATE RESISTANCE (OHMS)
0.20
0.15
TJ, JUNCTION TEMPERATURE (
°
C)
150
–50
0.10
0
,
E
0.05
15
25
–25
0
25
0.15
35
0.20
50
75
100
125
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
IC = 3.0 A
2.0 A
1.0 A
VCC = 360 V
VGE = 15 V
RG = 20
IC = 3.0 A
2.0 A
1.0 A
0.10
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. Turn–Off Losses versus
Gate Resistance
2
3
0
IC, COLLECTOR CURRENT (AMPS)
0.10
0
0.5
0.15
0.05
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
RG = 20
1
1.5
,
E
,
E
0
0.25
0.30
50
0.25
0.05
0.20
0.25
5
10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
800
400
200
0
Qg, TOTAL GATE CHARGE (nC)
5
0
20
16
12
4
0
10
C
15
25
20
25
15
8
V
Cies
Coes
Cres
TJ = 25
°
C
VGE = 0 V
QT
Q2
Q1
TJ = 25
°
C
VCC = 300 V
IC = 3.0 A
600
20
45
5
RG, GATE RESISTANCE (OHMS)
0.2
0.1
,
E
0
15
25
35
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
IC = 3.0 A
2.0 A
1.0 A
2.5
50
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