參數(shù)資料
型號(hào): MGB15N40CL
廠商: ON SEMICONDUCTOR
英文描述: Ignition IGBT 15 Amps, 410 Volts(15A,410V鉗位電壓,點(diǎn)火絕緣柵雙極型晶體管(D2PAK封裝))
中文描述: 點(diǎn)火IGBT15安培,410伏特,(第15A,410V鉗位電壓,點(diǎn)火絕緣柵雙極型晶體管(采用D2PAK封裝))
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 73K
代理商: MGB15N40CL
MGP15N40CL, MGB15N40CL
http://onsemi.com
5
20
10
25
5
15
0
–50
30
TEMPERATURE (
°
C)
I
L = 2.0 mH
50
75
25
0
100
–25
125
150
175
VCC = 50 V
VGE = 5.0 V
RG = 1000
L = 3.0 mH
L = 6.0 mH
0
20
6
4
2
I
0
30
INDUCTOR (mH)
5
10
15
25
8
10
T = 25
°
C
T = 150
°
C
VCC = 50 V
VGE = 5.0 V
RG = 1000
12
10
6
8
4
2
0
–50
2
4
0
6
8
10
12
14
20
10
25
5
15
0
–50
30
0
20
6
4
2
I
0
TEMPERATURE (
°
C)
Figure 7. Minimum Open Secondary Latch
Current vs. Inductor
Figure 8. Minimum Open Secondary Latch
Current vs. Temperature
I
Figure 9. Typical Open Secondary Latch
Current vs. Inductor
Figure 10. Typical Open Secondary Latch
Current vs. Temperature
Figure 11. Switching Speed vs. Case
Temperature
TC, CASE TEMPERATURE (
°
C)
Figure 12. Switching Speed vs. Collector
Current
IC, COLLECTOR CURRENT (AMPS)
S
μ
S
S
μ
S
30
0
8
10
6
4
12
2
16
L = 2.0 mH
INDUCTOR (mH)
5
10
15
25
8
10
T = 25
°
C
T = 150
°
C
VCC = 50 V
VGE = 5.0 V
RG = 1000
50
75
25
0
100
–25
125
150
175
VCC = 50 V
VGE = 5.0 V
RG = 1000
L = 3.0 mH
L = 6.0 mH
50
75
25
0
100
–25
125
150
VCC = 300 V
VGE = 5.0 V
RG = 1000
IC = 10 A
L = 300
μ
H
VCC = 300 V
VGE = 5.0 V
RG = 1000
TJ = 150
°
C
L = 300
μ
H
14
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