參數(shù)資料
型號(hào): MGB15N40CL
廠商: ON SEMICONDUCTOR
英文描述: Ignition IGBT 15 Amps, 410 Volts(15A,410V鉗位電壓,點(diǎn)火絕緣柵雙極型晶體管(D2PAK封裝))
中文描述: 點(diǎn)火IGBT15安培,410伏特,(第15A,410V鉗位電壓,點(diǎn)火絕緣柵雙極型晶體管(采用D2PAK封裝))
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 73K
代理商: MGB15N40CL
MGP15N40CL, MGB15N40CL
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.0
°
C/W
Thermal Resistance, Junction to Ambient
TO–220
D2PAK (Note 1.)
62.5
50
Maximum Lead Temperature for Soldering Purposes, 1/8
from case for 5 seconds
275
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
BVCES
IC = 2 mA
TJ = –40
°
C to 175
°
C
380
410
440
VDC
Zero Gate Voltage Collector Current
ICES
VCE = 350 V,
VGE = 0, TJ = 25
°
C
1.5
20
μ
ADC
VCE = 350 V,
VGE = 0, TJ = 150
°
C
10
40
Reverse Collector–Emitter Leakage Current
IECS
VCE = –24 V
IC = –75 mA
IG = 5 mA
VGE = 10 V
0.35
1.0
mA
Reverse Collector–Emitter Clamp Voltage
BVCES(R)
BVGES
IGES
RG
RGE
25
33
50
VDC
VDC
μ
ADC
Gate–Emitter Clamp Voltage
17
20
22
Gate–Emitter Leakage Current
384
600
1000
Gate Resistor (Optional)
70
Gate Emitter Resistor
10
16
26
k
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage
VGE(th)
IC = 1 mA
VGE = VCE
1.0
1.7
2.1
VDC
Threshold Temperature Coefficient (Negative)
4.4
mV/
°
C
Collector–to–Emitter On–Voltage
VCE(on)
IC = 6 A, VGE = 4 V
IC = 10 A, VGE = 4 V
IC = 15 A, VGE = 4 V
1.3
1.8
VDC
1.6
1.9
1.9
2.2
IC = 20 A, VGE = 4 V
IC = 25 A, VGE = 4 V
IC = 10 A,
VGE = 4.5 V,
TJ = 150
°
C
2.2
2.5
2.5
2.9
Collector–to–Emitter On–Voltage
VCE(on)
1.5
1.8
VDC
Forward Transconductance
gfs
VCE = 5 V, IC = 6 A
8.0
15
25
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
VCC
VGE = 0 V
f = 1 MHz
1000
1300
pF
Output Capacitance
100
130
Transfer Capacitance
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width
300
μ
S, Duty Cycle
5.0
8.0
2%.
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