參數(shù)資料
型號(hào): MGA-412P8-TR2G
廠商: Avago Technologies Ltd.
英文描述: GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
中文描述: GaAs增強(qiáng)模式pHEMT功率放大器優(yōu)化的IEEE 802.11b / g應(yīng)用
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 135K
代理商: MGA-412P8-TR2G
6
Figure 6. Output Power and Gain vs Input Power
Figure 7. Detector vs Output Power
Figure 8. EVM & Current vs Output Power
Figure 9. EVM vs Modulated Output Power
Figure 10. Total Current vs Modulated Output Power
Figure 11. PAE vs Modulated Output Power
MGA-412P8 Typical Performance I
Tc = +25 °C, Vdd = 3.3V Input Signal=CW unless stated otherwise.
MGA-412P8 Typical Performance II
Tc = +25 °C, Vdd = 3.3V Input Signal=OFDM signal with 54Mbps, Modulation=64QAM unless stated otherwise.
Pout and Gain vs Pin
0
5
10
15
20
25
30
-25
-20
-15
-10
-5
0
5
Input Power (dBm)
P
Pout
Gain
Vdet vs Pout
0
0.5
1
1.5
2
2.5
5
7
9
11
13
15
17
19
21
23
25
27
Output Power (dBm)
D
VDD=3V
VDD=3.3V
VDD=3.6V
EVM & Current vs Modulated Pout
0
1
2
3
4
5
6
7
8
9
10
11
12
5
6
7
8
9
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
Modulated Output Power (dBm)
E
0
20
40
60
80
100
120
140
160
180
C
EVM
Current
EVM vs Modulated Pout
0
1
2
3
4
5
6
7
8
9
10
11
12
5
7
9
11
Modulated Output Power (dBm)
13
15
17
19
21
23
25
E
VDD=3.0V
VDD=3.3V
VDD=3.6V
Total current vs Modulated Output Power
0
20
40
60
80
100
120
140
160
180
5
7
9
11
13
15
17
19
21
23
25
Modulated Output Power(dBm)
I
VDD=3.0V
VDD=3.3V
VDD=3.6V
PAE vs Modulated Output Power
0
10
20
30
40
50
60
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Modulated Output Power (dBm)
P
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