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參數(shù)資料
| 型號： | MGA-412P8-TR2G |
| 廠商： | Avago Technologies Ltd. |
| 英文描述： | GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications |
| 中文描述： | GaAs增強模式pHEMT功率放大器優(yōu)化的IEEE 802.11b / g應(yīng)用 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 135K |
| 代理商： | MGA-412P8-TR2G |
2
USL
30
35
40
50
55
45
LSL
24 24.2
24.6
25 25.2
25.6
26
LSL
23
24
25
26
27
28
Thermal Resistance [2]
(Vdd = 3.3V),
θ
jc = 33.3 °C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150 °C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb is 25
°C. Derate 30mW/ °C for Tb>123.36 °C.
Absolute Maximum Rating [1] Tc=25°C
Product Consistency Distribution Charts [4,5]
Figure 1. Id@ 2.452GHz; Nominal = 40mA, USL: 55mA
Figure 2. P1dB @ 2.452GHz; Nominal = 25.3dBm, LSL: 24dB
Figure 3. Gain@ 2.452GHz; Nominal = 25.5dB, LSL: 23 dB
Symbol
Parameter
Units
Absolute Max.
V
dd
Device Voltage, RF output to
ground
V
5
P
in
CW RF Input Power (Vdd = 3.3V)
dBm
10
P
diss
Total Power Dissipation
[3]
W
0.8
T
j
Junction Temperature
o
C
150
T
STG
Storage Temperature
o
C
-65 to 150
Notes:
4. Distribution data sample size is 500 samples taken from 3 different
wafers and 3 different lots. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
5. Measurements are made on production test board, which
represents a trade-off between optimal Gain and P1dB. Circuit
losses have been de-embedded from actual measurements.
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