參數(shù)資料
型號(hào)： MCR8DSN
廠商： MOTOROLA INC
元件分類(lèi)： 晶閘管
英文描述： Silicon Controlled Rectifiers
中文描述： 8 A, 800 V, SCR
封裝： CASE 369A-13, DPAK-3
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 127K
代理商： MCR8DSN
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C; RGK = 1.0 K unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Peak Reverse Gate Blocking Voltage
(IGR = 10 A)
VGRM
10
12.5
18
Volts
Peak Forward Blocking Current
Peak Reverse Blocking Current
(VAK = Rated VDRM or VRRM) (1)
TJ = 25
°
C
TJ = 110
°
C
IDRM
IRRM
—
—
—
—
10
500
A
Peak Reverse Gate Blocking Current
(VGR = 10 V)
Peak On–State Voltage (2)
(ITM = 16 A)
Gate Trigger Current (Continuous dc) (3)
(VD = 12 V, RL = 100 , TJ = 25
°
C)
(VD = 12 V, RL = 100 , TJ = –40
°
C)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 , TJ = 25
°
C)
(VD = 12 V, RL = 100 , TJ = –40
°
C)
(VD = 12 V, RL = 100 , TJ = 110
°
C)
IRGM
—
—
1.2
A
VTM
—
1.4
1.8
Volts
IGT
5.0
—
12
—
200
300
A
VGT
0.45
—
0.2
0.65
—
—
1.0
1.5
—
Volts
Holding Current
(VD = 12 V, I(init) = 200 mA, TJ = 25
°
C)
(VD = 12 V, I(init) = 200 mA, TJ = –40
°
C)
IH
0.5
—
1.0
—
6.0
10
mA
Latching Current
(VD = 12 V, IG = 2.0 mA, TJ = 25
°
C)
(VD = 12 V, IG = 2.0 mA, TJ = –40
°
C)
DYNAMIC CHARACTERISTICS
IL
0.5
—
1.0
—
6.0
10
mA
Characteristics
Symbol
Min
Typ
Max
Unit
Total Turn–On Time
(Source Voltage = 12 V, RS = 6.0 K , IT = 16 A(pk), RGK = 1.0 K )
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s)
Critical Rate of Rise of Off–State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform,
RGK = 1.0 K , TJ = 110
°
C)
(1) Ratings apply for negative gate voltage or RGK = 1.0 K . Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(2) Pulse Test; Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
(3) Does not include RGK current.
tgt
—
2.0
5.0
s
dv/dt
2.0
10
—
V/ s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCR8DSNT4 功能描述:SCR 800V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR8DSNT4G 功能描述:SCR 800V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR8M 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述:
MCR8N 功能描述:SCR 800V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR8NG 功能描述:SCR 800V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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