參數(shù)資料
型號(hào)： MCR8S
廠商： Motorola, Inc.
英文描述： Silicon Controlled Rectifiers
中文描述： 可控硅整流器
文件頁數(shù)： 1/2頁
文件大小： 67K
代理商： MCR8S
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Designed primarily for half–wave ac control applications, such as motor
controls, heating controls, and power supplies; or wherever half–wave, silicon
gate–controlled devices are needed.
Blocking Voltage to 800 Volts
On-State Current Rating of 8 Amperes RMS
High Surge Current Capability — 90 Amperes
Industry Standard TO–220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
Low Trigger Currents, 200
μ
A Maximum for Direct Driving from Integrated Circuits
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 110
°
C; RGK = 1.0 K
)
MCR8SD
MCR8SM
MCR8SN
VDRM
VRRM
400
600
800
Volts
On-State RMS Current
(All Conduction Angles)
IT(RMS)
8
A
Peak Non-repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125
°
C)
ITSM
90
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
34
A2sec
Peak Gate Power (Pulse Width
≤
1.0
μ
s, TC = 80
°
C)
Average Gate Power (t = 8.3 ms, TC = 80
°
C)
Peak Gate Current (Pulse Width
≤
1.0
μ
s, TC = 80
°
C)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
TJ
Tstg
5.0
Watts
0.5
Watts
2.0
A
–40 to +110
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
2.2
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
(1)
VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TL
260
°
C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MCR8S/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221A–06
(TO-220AB)
Style 3
K
A
G
SCRs
8 AMPERES RMS
400 thru 800
VOLTS
*Motorola preferred devices
A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCR8SD 功能描述:SCR 400V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR8SDG 功能描述:SCR 400V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR8SM 功能描述:SCR 600V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR8SMG 功能描述:SCR 600V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR8SN 功能描述:SCR 800V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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