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參數(shù)資料
| 型號(hào)： | MCR225FP |
| 廠商： | Motorola, Inc. |
| 英文描述： | Silicon Controlled Rectifiers |
| 中文描述： | 可控硅整流器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 122K |
| 代理商： | MCR225FP |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Reverse Blocking Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Insulated Package Simplifies Mounting
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = –40 to +125
°
C, Gate Open)
MCR225-2FP
MCR225-4FP
MCR225-6FP
MCR225-8FP
MCR225-10FP
VDRM
VRRM
50
200
400
600
800
Volts
On-State RMS Current (TC = +70
°
C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +70
°
C)
Preceded and followed by rated current
IT(RMS)
ITSM
25
Amps
300
Amps
Circuit Fusing (t = 8.3 ms)
I2t
375
A2s
Peak Gate Power (TC = +70
°
C, Pulse Width = 10
μ
s)
Average Gate Power (TC = +70
°
C, t = 8.3 ms)
Peak Gate Current (TC = +70
°
C, Pulse Width = 10
μ
s)
RMS Isolation Voltage (TA = 25
°
C, Relative Humidity
Operating Junction Temperature Range
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
20
Watts
0.5
Watt
2
Amps
20%)
1500
Volts
–40 to +125
°
C
Storage Temperature Range
–40 to +125
°
C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Order this document
by MCR225FP/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221C-02
STYLE 2
ISOLATED SCRs
25 AMPERES RMS
50 thru 800 VOLTS
K
G
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR22-6 | 制造商:Motorola Inc 功能描述: |
| MCR22-6_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR22-6G | 功能描述:SCR 400V 1.5A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR22-6RLRA | 功能描述:SCR 400V 1.5A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR22-6RLRAG | 功能描述:SCR 400V 1.5A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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