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參數(shù)資料
| 型號(hào)： | MCR704 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Silicon Controlled Rectifiers |
| 中文描述： | 可控硅整流器 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 107K |
| 代理商： | MCR704 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Reverse Blocking Triode Thyristors
. . . PNPN devices designed for high volume, low cost consumer applications such as
temperature, light and speed control; process and remote control; and warning
systems where reliability of operation is critical.
Small Size
Passivated Die Surface for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Recommend Electrical Replacement for C106
Available in Two Package Styles:
Surface Mount Leadforms — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
To Obtain “DPAK” in Surface Mount Leadform (Case 369A):
Shipped in Sleeves — No Suffix, i.e., MCR706A
Shipped in 16 mm Tape and Reel — Add “RL” Suffix to Device Number, i.e.,
MCR706ARL
To Obtain “DPAK” in Straight Lead Version:
Shipped in Sleeves — Add ‘1’ Suffix to Device Number, i.e., MCR706A1
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage
(1)
(1/2 Sine Wave)
(RGK = 1000 Ohms,
TC = –40 to +110
°
C)
MCR703A1, MCR703A
MCR704A1, MCR704A
MCR706A1, MCR706A
MCR708A1, MCR708A
VDRM
or
VRRM
100
200
400
600
Volts
Peak Non-repetitive Reverse Blocking Voltage
(1/2 Sine Wave, RGK = 1000 Ohms,
TC = –40 to +110
°
C)
MCR703A1, MCR703A
MCR704A1, MCR704A
MCR706A1, MCR706A
MCR708A1, MCR708A
VRSM
150
250
450
650
Volts
Average On-State Current
(TC = –40 to +90
°
C)
(TC = +100
°
C)
IT(AV)
2.6
1.6
Amps
Surge On-State Current
(1/2 Sine Wave, 60 Hz, TC =
+90
°
C)
(1/2 Sine Wave, 1.5 ms TC =
+90
°
C)
ITSM
25
35
Amps
Circuit Fusing (t = 8.3 ms)
I2t
2.6
A2s
Peak Gate Power (Pulse Width = 10
μ
s, TC = 90
°
C)
Average Gate Power (t = 8.3 ms, TC = 90
°
C)
Peak Forward Gate Current
PGM
PG(AV)
IGM
VRGM
TJ
Tstg
0.5
Watt
0.1
Watt
0.2
Amp
Peak Reverse Gate Voltage
6
Volts
Operating Junction Temperature Range
–40 to +110
°
C
Storage Temperature Range
–40 to +150
°
C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or
negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MCR703A/D
SEMICONDUCTOR TECHNICAL DATA
REV 1
CASE 369A
STYLE 5
SCRs
4.0 AMPERES RMS
100 thru 600 VOLTS
CASE 369
STYLE 5
A
A
K
G
K
A
A
G
Figure 1. Minimum Pad
Sizes for
Surface Mounting
*Motorola preferred devices
K
G
A
0
4
0.243
6.172
0.190
4.826
inches
mm
0
1
0
2
0
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCR704A | Silicon Controlled Rectifiers |
| MCR705A | Silicon Controlled Rectifiers |
| MCR706A | Silicon Controlled Rectifiers |
| MCR707A | Silicon Controlled Rectifiers |
| MCR708A | Silicon Controlled Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR704A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Silicon Controlled Rectifiers |
| MCR704ARL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MCR705A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Silicon Controlled Rectifiers |
| MCR705JP7CDWE | 功能描述:8位微控制器 -MCU 8B MCU 224 BYTES RAM RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MCR706A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Silicon Controlled Rectifiers |
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