參數(shù)資料
型號： MCP601-E/P
廠商： Microchip Technology
文件頁數(shù)： 7/34頁
文件大?。?/td> 0K
描述： IC OPAMP CMOS SGL 2.7V 8-DIP
標準包裝： 60
放大器類型： 通用
電路數(shù)： 1
輸出類型： 滿擺幅
轉(zhuǎn)換速率： 2.3 V/µs
增益帶寬積： 2.8MHz
電流 - 輸入偏壓： 1pA
電壓 - 輸入偏移： 700µV
電流 - 電源： 230µA
電流 - 輸出 / 通道： 22mA
電壓 - 電源，單路/雙路(±)： 2.7 V ~ 6 V
工作溫度： -40°C ~ 125°C
安裝類型： 通孔
封裝/外殼： 8-DIP（0.300"，7.62mm）
供應(yīng)商設(shè)備封裝： 8-PDIP
包裝： 管件
產(chǎn)品目錄頁面： 678 (CN2011-ZH PDF)
2007 Microchip Technology Inc.
DS21314G-page 15
MCP601/1R/2/3/4
4.8.2
INSTRUMENTATION AMPLIFIER
CIRCUITS
Instrumentation amplifiers have a differential input that
subtracts one input voltage from another and rejects
common mode signals. These amplifiers also provide a
single-ended output voltage.
The three-op amp instrumentation amplifier is illustrated
in Figure 4-10. One advantage of this approach is unity-
gain operation, while one disadvantage is that the
common mode input range is reduced as R2/RG gets
larger.
FIGURE 4-10:
Three-Op Amp
Instrumentation Amplifier.
The two-op amp instrumentation amplifier is shown in
Figure 4-11. While its power consumption is lower than
the three-op amp version, its main drawbacks are that
the common mode range is reduced with higher gains
and it must be configured in gains of two or higher.
FIGURE 4-11:
Two-Op Amp
Instrumentation Amplifier.
Both instrumentation amplifiers should use a bulk
bypass capacitor of at least 1 F. The CMRR of these
amplifiers will be set by both the op amp CMRR and
resistor matching.
4.8.3
PHOTO DETECTION
The MCP601/1R/2/3/4 op amps can be used to easily
convert the signal from a sensor that produces an
output current (such as a photo diode) into a voltage (a
transimpedance amplifier). This is implemented with a
single resistor (R2) in the feedback loop of the
amplifiers shown in Figure 4-12 and Figure 4-13. The
optional capacitor (C2) sometimes provides stability for
these circuits.
A photodiode configured in the Photovoltaic mode has
zero voltage potential placed across it (Figure 4-12). In
this mode, the light sensitivity and linearity is
maximized, making it best suited for precision
applications. The key amplifier specifications for this
application are: low input bias current, low noise,
common mode input voltage range (including ground),
and rail-to-rail output.
FIGURE 4-12:
Photovoltaic Mode Detector.
In contrast, a photodiode that is configured in the
Photoconductive mode has a reverse bias voltage
across the photo-sensing element (Figure 4-13). This
decreases the diode capacitance, which facilitates
high-speed
operation
(e.g.,
high-speed
digital
communications). The design trade-off is increased
diode leakage current and linearity errors. The op amp
needs to have a wide Gain Bandwidth Product
(GBWP).
FIGURE 4-13:
Photoconductive Mode
Detector.
MCP60X
V1
MCP60X
V2
R2
R3
MCP60X
R4
R3
R4
VOUT
VREF
RG
+
–
+
–
+
V
OUT
V
1
V
2
–
() 1
2R
2
R
G
---------
+
R4
R
3
------
V
REF
+
=
MCP60X
V2
RG
R2
MCP60X
R1
VOUT
VREF
V1
R1
-
+
-
+
V
OUT
V
1
V
2
–
() 1
R
1
R
2
------
2R
1
R
G
---------
++
V
REF
+
=
D1
Light
VOUT
VDD
MCP60X
R2
C2
ID1
VOUT = ID1 R2
–
+
D1
Light
VOUT
VDD
MCP60X
R2
C2
ID1
VOUT = ID1 R2
VBIAS
VBIAS < 0V
–
+
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