參數(shù)資料
型號: MCM69R820C
廠商: Motorola, Inc.
英文描述: 4M-bit Synchronous Late Write Fast SRAM(4M位同步遲寫、快速靜態(tài)RAM)
中文描述: 4分位同步后寫入快速靜態(tài)存儲器(4分位同步遲寫,快速靜態(tài)內(nèi)存)
文件頁數(shù): 7/20頁
文件大?。?/td> 301K
代理商: MCM69R820C
MCM69R738C
MCM69R820C
7
MOTOROLA FAST SRAM
DC INPUT CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Notes
DC Input Logic High
VIH (dc)
VIL (dc)
Ilkg(1)
Iclkg(1)
Vin
VDIF (dc)
VCM (dc)
1.7
VDD + 0.3
0.7
V
DC Input Logic Low
–0.3
V
1
Input Leakage Current
±
5
μ
A
2
Clock Input Leakage Current
±
8
μ
A
2
Clock Input Signal Voltage
–0.3
VDD + 0.3
VDD + 0.6
2.1
V
Clock Input Differential Voltage
0.2
V
3
Clock Input Common Mode Voltage Range (See Figure 3)
1.1
V
4
NOTES:
1. Inputs may undershoot to –0.5 V (peak) for up to 20% tKHKH (e.g., 2 ns at a clock cycle time of 10 ns).
2. 0 V
Vin
VDD.
3. Minimum instantaneous differential input voltage required for differential input clock operation.
4. Maximum rejectable common mode input voltage variation.
DC OUTPUT CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Notes
Output Leakage Current
Ilkg(0)
VOL
VOH
–1
1
μ
A
Output Low Voltage
0.7
V
1
Output High Voltage
1.7
V
2
NOTES:
1. IOL
– 8 mA
.
2. IOH
8 mA.
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, VDD = 3.3 V
±
5%, 0
°
C
TA
70
°
C, Periodically Sampled Rather Than 100% Tested)
Characteristic
Symbol
Typ
Max
Unit
Input Capacitance
Cin
CI/O
CCK
4
5
pF
Input/Output Capacitance
7
8
pF
CK, CK Capacitance
4
5
pF
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