參數(shù)資料
型號(hào)： MC8610TPX800GB
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 19/96頁(yè)
文件大?。?/td> 0K
描述： MPU E600 CORE 800MHZ 783-PBGA
標(biāo)準(zhǔn)包裝： 36
系列： MPC86xx
處理器類型： 32-位 MPC86xx PowerPC
速度： 800MHz
電壓： 1V
安裝類型： 表面貼裝
封裝/外殼： 783-BBGA，F(xiàn)CBGA
供應(yīng)商設(shè)備封裝： 783-FCPBGA（29x29）
包裝： 托盤
MPC8610 Integrated Host Processor Hardware Specifications, Rev. 2
Electrical Characteristics
Freescale Semiconductor
26
2.6.1
DDR SDRAM DC Electrical Characteristics
Table 14 provides the recommended operating conditions for the DDR2 SDRAM component(s) of the MPC8610 when
GVDD(typ) = 1.8 V.
Table 15 provides the DDR capacitance when GVDD(typ) = 1.8 V.
Table 16 provides the recommended operating conditions for the DDR SDRAM component(s) when GVDD(typ) = 2.5 V.
Table 14. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
1.71
1.89
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V2
I/O termination voltage
VTT
MVREF –0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF +0.125
GVDD +0.3
V
Input low voltage
VIL
–0.3
MVREF – 0.125
V
Output leakage current
IOZ
–50
50
μA4
Output high current (VOUT = 1.420 V)
IOH
–13.4
—
mA
Output low current (VOUT = 0.280 V)
IOL
13.4
—
mA
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
≤ VOUT ≤ GVDD.
Table 15. DDR2 SDRAM Capacitance for GVDD(typ)=1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, DQS
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS, DQS
CDIO
—0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 16. DDR SDRAM DC Electrical Characteristics for GVDD (typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
2.375
2.625
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.15
GVDD + 0.3
V
Input low voltage
VIL
–0.3
MVREF – 0.15
V
Output leakage current
IOZ
–50
50
μA4
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