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參數(shù)資料
| 型號(hào)： | MC33153 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Single IGBT Gate Driver(單IGBT門驅(qū)動(dòng)器) |
| 中文描述： | 單IGBT柵極驅(qū)動(dòng)器（單IGBT的門驅(qū)動(dòng)器） |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 194K |
| 代理商： | MC33153 |
MC33153
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 15 V, V
EE
= 0 V, Kelvin Gnd connected to V
EE
. For typical values
T
A
= 25
°
C, for min/max values T
A
is the operating ambient temperature range that applies (Note 2), unless otherwise noted.)
Characteristic
Unit
Max
Typ
Min
Symbol
SWITCHING CHARACTERISTICS
(continued)
Propagation Delay
Current Sense Input to Drive Output
Fault Blanking/Desaturation Input to Drive Output
μ
s
t
P(OC)
t
P(FLT)
0.3
0.3
1.0
1.0
UVLO
Startup Voltage
V
CC start
11.3
12
12.6
V
Disable Voltage
V
CC dis
10.4
11
11.7
V
COMPARATORS
Overcurrent Threshold Voltage (V
Pin8
> 7.0 V)
V
SOC
50
65
80
mV
Short Circuit Threshold Voltage (V
Pin8
> 7.0 V)
V
SSC
100
130
160
mV
Fault Blanking/Desaturation Threshold (V
Pin1
> 100 mV)
V
th(FLT)
6.0
6.5
7.0
V
Current Sense Input Current (V
SI
= 0 V)
I
SI
1.4
10
μ
A
FAULT BLANKING/DESATURATION INPUT
Current Source (V
Pin8
= 0 V, V
Pin4
= 0 V)
I
chg
200
270
300
μ
A
Discharge Current (V
Pin8
= 15 V, V
Pin4
= 5.0 V)
I
dschg
1.0
2.5
mA
TOTAL DEVICE
Power Supply Current
Standby (V
Pin 4
= V
CC
, Output Open)
Operating (C
L
= 1.0 nF, f = 20 kHz)
I
CC
7.2
7.9
14
20
mA
NOTES:
1.Kelvin Ground must always be between V
and V
.
2.Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
T
low
=
40
°
C for MC33153
T
high
= +105
°
C for MC33153
0
16
0
1.5
VO
V
in
, INPUT VOLTAGE (V)
Ii
Figure 1. Input Current versus Input Voltage
V
in
, INPUT VOLTAGE (V)
Figure 2. Output Voltage versus Input Voltage
V
CC
= 15 V
T
A
= 25
°
C
V
CC
= 15 V
T
A
= 25
°
C
1.0
0.5
0
2.0
4.0
6.0
8.0
10
12
14
16
14
12
10
8.0
6.0
4.0
2.0
0
1.0
2.0
3.0
4.0
5.0
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