參數(shù)資料
型號: MC33153
廠商: ON SEMICONDUCTOR
英文描述: Single IGBT Gate Driver(單IGBT門驅(qū)動器)
中文描述: 單IGBT柵極驅(qū)動器(單IGBT的門驅(qū)動器)
文件頁數(shù): 2/15頁
文件大?。?/td> 194K
代理商: MC33153
MC33153
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage
V
CC
to V
EE
Kelvin Ground to V
EE
(Note 1)
Logic Input
V
V
CC
V
EE
KGnd
V
EE
V
in
V
S
V
BD
I
O
20
20
V
EE
0.3 to V
CC
0.3 to V
CC
0.3 to V
CC
V
Current Sense Input
V
Blanking/Desaturation Input
V
Gate Drive Output
Source Current
Sink Current
Diode Clamp Current
1.0
2.0
1.0
A
Fault Output
Source Current
Sink Current
I
FO
25
10
mA
Power Dissipation and Thermal Characteristics
D Suffix SO
8 Package, Case 751
Maximum Power Dissipation @ T
A
= 50
°
C
Thermal Resistance, Junction
to
Air
P Suffix DIP
8 Package, Case 626
Maximum Power Dissipation @ T
A
= 50
°
C
Thermal Resistance, Junction
to
Air
P
D
R
θ
JA
P
D
R
θ
JA
T
J
T
A
T
stg
0.56
180
1.0
100
W
°
C/W
W
°
C/W
Operating Junction Temperature
+150
°
C
°
C
°
C
Operating Ambient Temperature
40 to +105
Storage Temperature Range
65 to +150
NOTE:
ESD data available upon request.
ELECTRICAL CHARACTERISTICS
(V
CC
= 15 V, V
EE
= 0 V, Kelvin Gnd connected to V
EE
. For typical values
T
A
= 25
°
C, for min/max values T
A
is the operating ambient temperature range that applies (Note 2), unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
LOGIC INPUT
Input Threshold Voltage
High State (Logic 1)
Low State (Logic 0)
V
IH
V
IL
1.2
2.70
2.30
3.2
V
Input Current
High State (V
IH
= 3.0 V)
Low State (V
IL
= 1.2 V)
I
IH
I
IL
130
50
500
100
μ
A
DRIVE OUTPUT
Output Voltage
Low State (I
Sink
= 1.0 A)
High State (I
Source
= 500 mA)
V
OL
V
OH
12
2.0
13.9
2.5
V
Output Pull
Down Resistor
R
PD
100
200
k
Ω
FAULT OUTPUT
Output voltage
Low State (I
Sink
= 5.0 mA)
High State (I
Source
= 20 mA)
V
FL
V
FH
12
0.2
13.3
1.0
V
SWITCHING CHARACTERISTICS
Propagation Delay (50% Input to 50% Output C
L
= 1.0 nF)
Logic Input to Drive Output Rise
Logic Input to Drive Output Fall
t
PLH(in/out)
t
PHL (in/out)
80
120
300
300
ns
Drive Output Rise Time (10% to 90%) C
L
= 1.0 nF
t
r
17
55
ns
Drive Output Fall Time (90% to 10%) C
L
= 1.0 nF
t
f
17
55
ns
NOTES:
1.Kelvin Ground must always be between V
and V
.
2.Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
T
low
=
40
°
C for MC33153
T
high
= +105
°
C for MC33153
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