參數(shù)資料
型號(hào)： MC-4R512FKE8D-653
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
中文描述： 256M X 18 DIRECT RAMBUS DRAM MODULE, 2.11 ns, DMA184
封裝： SOCKET TYPE, RIMM-184
文件頁(yè)數(shù)： 8/14頁(yè)
文件大?。?/td> 132K
代理商： MC-4R512FKE8D-653
Data Sheet
E0076N20 (Ver 2.0)
8
MC-4R512FKE8D
Electrical Specification
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
V
I,ABS
Voltage applied to any RSL or CMOS signal pad with respect to GND
0.3
V
DD
+ 0.3
V
V
DD,ABS
Voltage on V
DD
with respect to GND
0.5
V
DD
+ 1.0
V
T
STORE
Storage temperature
50
+100
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
MIN.
MAX.
Unit
V
DD
Supply voltage
2.50
0.13
2.50 + 0.13
V
V
CMOS
CMOS I/O power supply at pad
2.5V controllers
2.5
0.13
2.5 + 0.25
V
1.8V controllers
1.8
0.1
1.8 + 0.2
V
REF
Reference voltage
1.4
0.2
1.4 + 0.2
V
V
IL
RSL input low voltage
V
REF
0.5
V
REF
0.2
V
V
IH
RSL input high voltage
V
REF
+ 0.2
V
REF
+ 0.5
V
V
IL,CMOS
CMOS input low voltage
0.3
0.5V
CMOS
0.25
V
V
IH,CMOS
CMOS input high voltage
0.5V
CMOS
+0.25
V
CMOS
+ 0.3
V
V
OL,CMOS
CMOS output low voltage, I
OL,CMOS
= 1 mA
—
0.3
V
V
OH,CMOS
CMOS output high voltage, I
OH,CMOS
=
0.25 mA
V
CMOS
0.3
—
V
I
REF
V
REF
current, V
REF
,
MAX
160.0
+160.0
μ
A
I
SCK,CMD
CMOS input leakage current, (0
≤
V
CMOS
≤
V
DD
)
160.0
+160.0
μ
A
I
SIN,SOUT
CMOS input leakage current, (0
≤
V
CMOS
≤
V
DD
)
10.0
+10.0
μ
A
相關(guān)PDF資料
PDF描述
MC-4R512FKE8D-745 Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R64CEE6B Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0.75 A; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA
MC-4R64CEE6B-653 Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0-20 mA; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA
MC-4R64CEE6B-745 Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0-20 mA; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA
MC-4R64CEE6B-845 Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC-4R512FKE8D-745 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-840 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKE8D-845 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKK6K 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB 32-bit Direct Rambus DRAM RIMM Module
MC-4R512FKK6K-840 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB 32-bit Direct Rambus DRAM RIMM Module
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*