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參數(shù)資料
| 型號(hào)： | MC-4R512FKE8D-653 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| 中文描述： | 256M X 18 DIRECT RAMBUS DRAM MODULE, 2.11 ns, DMA184 |
| 封裝： | SOCKET TYPE, RIMM-184 |
| 文件頁(yè)數(shù)： | 6/14頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | MC-4R512FKE8D-653 |
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Data Sheet
E0076N20 (Ver 2.0)
6
MC-4R512FKE8D
(2/2)
Signal
I/O
Type
Description
RSCK
I
V
CMOS
Serial clock input. Clock source used to read from and write to the RDRAM
control registers.
SA0
I
SV
DD
Serial Presence Detect Address 0.
SA1
I
SV
DD
Serial Presence Detect Address 1.
SA2
I
SV
DD
Serial Presence Detect Address 2.
SCL
I
SV
DD
Serial Presence Detect Clock.
SDA
I/O
SV
DD
Serial Presence Detect Data (Open Collector I/O).
SIN
I/O
V
CMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO0
of the first RDRAM on the module.
SOUT
I/O
V
CMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO1
of the last RDRAM on the module.
SV
DD
—
—
SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
SWP
I
SV
DD
Serial Presence Detect Write Protect (active high). When low, the SPD can be
written as well as read.
V
CMOS
—
—
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
V
DD
—
—
Supply voltage for the RDRAM core and interface logic.
V
REF
—
—
Logic threshold reference voltage for RSL signals.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MC-4R512FKE8D-745 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKE8D-845 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT) |
| MC-4R512FKK6K | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB 32-bit Direct Rambus DRAM RIMM Module |
| MC-4R512FKK6K-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB 32-bit Direct Rambus DRAM RIMM Module |
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