參數(shù)資料
型號: MC-4R512FKE8D-653
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
中文描述: 256M X 18 DIRECT RAMBUS DRAM MODULE, 2.11 ns, DMA184
封裝: SOCKET TYPE, RIMM-184
文件頁數(shù): 10/14頁
文件大?。?/td> 132K
代理商: MC-4R512FKE8D-653
Data Sheet
E0076N20 (Ver 2.0)
10
MC-4R512FKE8D
RIMM Module Current Profile
I
DD
RIMM module power conditions
Note1
MAX.
Unit
I
DD1
One RDRAM in Read
Note2
, balance in NAP mode
-845
693
mA
-745
643
-653
583
I
DD2
One RDRAM in Read
Note2
, balance in Standby mode
-845
1980
mA
-745
1780
-653
1570
I
DD3
One RDRAM in Read
Note2
, balance in Active mode
-845
2655
mA
-745
2455
-653
2245
I
DD4
One RDRAM in Write, balance in NAP mode
-845
783
mA
-745
733
-653
683
I
DD5
One RDRAM in Write, balance in Standby mode
-845
2070
mA
-745
1870
-653
1670
I
DD6
One RDRAM in Write, balance in Active mode
-845
2745
mA
-745
2545
-653
2345
Notes 1.
Actual power will depend on individual RDRAM component specifications, memory controller and usage
patterns. Power does not include Refresh Current.
2.
I/O current is a function of the
% of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA or 290
mA for x18 ECC module for the following :
V
DD
= 2.5 V, V
TERM
= 1.8 V, V
REF
= 1.4 V and V
DIL
= V
REF
0.5 V.
相關PDF資料
PDF描述
MC-4R512FKE8D-745 Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R64CEE6B Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0.75 A; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA
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MC-4R64CEE6B-745 Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0-20 mA; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA
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