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參數(shù)資料
| 型號(hào)： | MC-458CB64PSB |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| 中文描述： | 800萬(wàn)字，64位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊以便內(nèi)存 |
| 文件頁(yè)數(shù)： | 5/16頁(yè) |
| 文件大小： | 126K |
| 代理商： | MC-458CB64PSB |
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Data Sheet M12263EJAV0DS00
5
MC-458CB64ESB, 458CB64PSB
Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 100
μ
s and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
V
CC
–0.5 to +4.6
V
Voltage on input pin relative to GND
V
T
–0.5 to +4.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
4
W
Operating ambient temperature
T
A
0 to +70
°
C
Storage temperature
T
stg
–55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+
0.3
V
Low level input voltage
V
IL
–0.3
+
0.8
V
Operating ambient temperature
T
A
0
70
°
C
Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
A0 - A11, BA0 (A13), BA1 (A12),
/RAS, /CAS, /WE
30
pF
C
I2
CLK0
30
C
I3
CKE0
30
C
I4
/CS0
30
C
I5
DQMB0 -DQMB7
10
Data input/output capacitance
C
I/O
DQ0 - DQ63
10
pF
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