參數(shù)資料
型號(hào): MC-428LFC72
廠商: NEC Corp.
英文描述: 3.3 V Operation 4M-Word By 64-Bit Dynamic RAM Module(工作電壓為3.3V的動(dòng)態(tài)RAM模塊)
中文描述: 3.3 V工作4分,64個(gè)字位動(dòng)態(tài)RAM模塊(工作電壓為3.3伏的動(dòng)態(tài)內(nèi)存模塊)
文件頁數(shù): 8/28頁
文件大?。?/td> 223K
代理商: MC-428LFC72
MC-428LFC72
8
Write Cycle
Parameter
Symbol
t
RAC
= 50 ns
t
RAC
= 60 ns
Unit
Notes
MIN.
MAX.
MIN.
MAX.
/WE hold time referenced to /CAS
t
WCH
7
10
ns
1
/WE pulse width
t
WP
7
10
ns
1
/WE lead time referenced to /RAS
t
RWL
18
20
ns
/WE lead time referenced to /CAS
t
CWL
7
10
ns
/WE setup time
t
WCS
0
0
ns
2
/OE hold time
t
OEH
0
0
ns
Data-in setup time
t
DS
–5
–5
ns
3
Data-in hold time
t
DH
12
15
ns
3
Notes 1.
t
WP (MIN.)
is applied to late write cycles or read modify write cycles. In early write cycles, t
WCH (MIN.)
should
be met.
2.
If t
WCS
t
WCS (MIN.)
, the cycle is an early write cycle and the data out will remain Hi-Z through the entire
cycle.
3.
t
DS (MIN.)
and t
DH (MIN.)
are referenced to the /CAS falling edge in early write cycles. In late write cycles and
read modify write cycles, they are referenced to the /WE falling edge.
Read Modify Write Cycle
Parameter
Symbol
t
RAC
= 50 ns
t
RAC
= 60 ns
Unit
Note
MIN.
MAX.
MIN.
MAX.
Read modify write cycle time
t
RWC
107
133
ns
/RAS to /WE delay time
t
RWD
59
72
ns
1
/CAS to /WE delay time
t
CWD
27
32
ns
1
Column address to /WE delay time
t
AWD
39
47
ns
1
Note 1.
If t
WCS
t
WCS (MIN.)
, the cycle is an early write cycle and the data out will remain Hi-Z through the entire cycle.
If t
RWD
t
RWD (MIN.)
, t
CWD
t
CWD (MIN.)
, t
AWD
t
AWD (MIN.)
and t
CPWD
t
CPWD (MIN.)
, the cycle is a read modify write
cycle and the data out will contain data read from the selected cell. If neither of the above conditions is
met, the state of the data out is indeterminate.
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