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參數資料
| 型號： | MC-428LFC72 |
| 廠商： | NEC Corp. |
| 英文描述： | 3.3 V Operation 4M-Word By 64-Bit Dynamic RAM Module(工作電壓為3.3V的動態(tài)RAM模塊) |
| 中文描述： | 3.3 V工作4分，64個字位動態(tài)RAM模塊（工作電壓為3.3伏的動態(tài)內存模塊） |
| 文件頁數： | 6/28頁 |
| 文件大?。?/td> | 223K |
| 代理商： | MC-428LFC72 |
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MC-428LFC72
6
V
IH (MIN.)
= 2.0 V
V
IL (MAX.)
= 0.8 V
V
OH (MIN.)
= 2.0 V
V
OL (MAX.)
= 0.8 V
t
T
= 2 ns
t
T
= 2 ns
AC Characteristics
(Recommended Operating Conditions unless otherwise noted)
AC Characteristics Test Conditions
(1) Input timing specification
(2) Output timing specification
(3) Output load condition
V
CC
1,180
870
100 pF
I/O
C
L
Common to Read, Write, Read Modify Write Cycle
Parameter
Symbol
t
RAC
= 50 ns
t
RAC
= 60 ns
Unit
Notes
MIN.
MAX.
MIN.
MAX.
Read / Write cycle time
t
RC
84
–
104
–
ns
/RAS precharge time
t
RP
30
–
40
–
ns
/CAS precharge time
t
CPN
7
–
10
–
ns
/RAS pulse width
t
RAS
50
10,000
60
10,000
ns
/CAS pulse width
t
CAS
8
10,000
10
10,000
ns
/RAS hold time
t
RSH
18
–
20
–
ns
/CAS hold time
t
CSH
33
–
35
–
ns
/RAS to /CAS delay time
t
RCD
6
32
9
40
ns
1
/RAS to column address delay time
t
RAD
4
20
7
25
ns
1
/CAS to /RAS precharge time
t
CRP
10
–
10
–
ns
2
Row address setup time
t
ASR
5
–
5
–
ns
Row address hold time
t
RAH
2
–
5
–
ns
Column address setup time
t
ASC
0
–
0
–
ns
Column address hold time
t
CAH
7
–
10
–
ns
/OE lead time referenced to /RAS
t
OES
5
–
5
–
ns
/CAS to data setup time
t
CLZ
5
–
5
–
ns
/OE to data setup time
t
OLZ
5
–
5
–
ns
/OE to data delay time
t
OED
15
–
18
–
ns
Transition time (rise and fall)
t
T
1
50
1
50
ns
Refresh time
t
REF
–
64
–
64
ms
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