參數(shù)資料
型號(hào)： MC-22212361F9-E85X-CD5
元件分類(lèi)： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA85
封裝： 11 X 8 MM, FBGA-85
文件頁(yè)數(shù)： 7/28頁(yè)
文件大小： 385K
代理商： MC-22212361F9-E85X-CD5
Preliminary Data Sheet M15855EJ3V0DS
15
MC-22212361-X
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Flash Memory
(1/2)
Parameter
Symbol
Test condition
-D80X
Unit
MIN.
TYP.
MAX.
High level output voltage
VOH
IOH =
0.1 mA
VCCQf
0.1
V
Low level output voltage
VOL
IOL = 0.1 mA
0.1
V
Input leakage current
ILI1
VIN = VSS to VCCQf, VCCQf = VCCQf (MAX.)
1.0
A
High voltage is applied
ILI2
/RESET = 11.0 V
35
I/O leakage current
ILO
VI/O = VSS to VCCQf, VCCQf = VCCQf (MAX.)
1.0
A
Power
Read
ICC1
/CEf = VIL, /OE = VIH, Cycle = 5 MHz,
10
20
mA
supply
IOUT = 0 mA
current Program, Erase
ICC2
/CEf = VIL, /OE = VIH,35
mA
Automatic programming / erase
Standby
ICC3
VCCf = VCCf (MAX.), /OE = VIL, /CEf = /RESET =
15
25
A
/WP(ACC) = VCCQf
± 0.3 V
Standby / Reset
ICC4
VCCf = VCCf (MAX.), /RESET = VSS
± 0.2 V
15
25
A
Automatic sleep mode
ICC5
VIH = VCCQf
± 0.2 V, VIL = VSS ± 0.2 V
15
25
A
Read during
programming
ICC6
VIH = VCCQf
± 0.2 V, VIL = VSS ± 0.2 V
55
mA
Read during erasing
ICC7
VIH = VCCQf
± 0.2 V, VIL = VSS ± 0.2 V
55
mA
Programming
ICC8
/CEf = VIL, /OE = VIH,35
mA
during suspend
Automatic programming during suspend
Accelerated
IACC
/WP (ACC) pin
5
10
mA
programming
VCCf15
35
Low VCCf lock-out voltage
Note
VLKO
1.0
V
Note When VCCf is equal to or lower than VLKO, the device ignores all write cycles. Refer to PAGE MODE FLASH
MEMORY, BURST MODE FLASH MEMORY Information (M15451E).
Remark VIN : Input voltage, VI/O : Input / Output voltage
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