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參數(shù)資料
| 型號(hào)： | MBT3906DW1T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 277K |
| 代理商： | MBT3906DW1T1 |
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
hie
1.0
2.0
10
12
k
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
hre
0.5
0.1
8.0
10
X 10–4
Small – Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
hfe
100
400
—
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
hoe
1.0
3.0
40
60
mmhos
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz)
MBT3904DW1T1 (NPN)
(VCE = –5.0 Vdc, IC = –100 mAdc, RS = 1.0 k , f = 1.0 kHz) MBT3906DW1T1 (PNP)
NF
—
5.0
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = – 0.5 Vdc)
MBT3904DW1T1 (NPN)
(VCC = –3.0 Vdc, VBE = 0.5 Vdc)
MBT3906DW1T1 (PNP)
td
—
35
ns
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
MBT3904DW1T1 (NPN)
(IC = –10 mAdc, IB1 = –1.0 mAdc)
MBT3906DW1T1 (PNP)
tr
—
35
ns
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
MBT3904DW1T1 (NPN)
(VCC = –3.0 Vdc, IC = –10 mAdc)
MBT3906DW1T1 (PNP)
ts
—
200
225
ns
Fall Time
(IB1 = IB2 = 1.0 mAdc)
MBT3904DW1T1 (NPN)
(IB1 = IB2 = –1.0 mAdc)
MBT3906DW1T1 (PNP)
tf
—
50
75
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBT3906DW1T1G | 功能描述:兩極晶體管 - BJT SS GP XSTR PNP 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3906DW1T1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistor |
| MBT3906DW1T2G | 制造商:ON Semiconductor 功能描述:SS SC88 GP XSTR PNP 40V - Tape and Reel 制造商:ON Semiconductor 功能描述:Dual PNP Bipolar Transistor 制造商:ON Semiconductor 功能描述:REEL - SS SC88 GP XSTR PNP 40V |
| MBT3906DW1T3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:ON Semiconductor 功能描述: |
| MBT3946DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+PNP Silicon |
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